BFW11 is a semiconductor device used to amplify or switch electronic signals and electrical power. It is composed of semiconductor material usually with at least three terminals for connection to an external circuit. A voltage or current applied to one pair of the transistor's terminals controls the current through another pair of terminals. Because the controlled (output) power can be higher than the controlling (input) power, a transistor can amplify a signal. Today, some transistors are packaged individually, but many more are found embedded in integrated circuits. Features:- • Metal TO-72 can package • Advanced process technology • Low error voltage • Fast switching speed • Full-voltage operation • High power and current handling capability Detailed Specifications:- Transistor Polarity N-Channel Drain-Source Voltage (VDS) 30VDC Drain-Gate Voltage (VDG) 30VDC Reverse Gate-Source Voltage (VGSR) 30VDC Forward Gate Current (IGF) 10mA Gate-Source Cut-off Voltage (VGS(off)) 6VDC Gate-Source Voltage (VGS) 4VDC Zero-Gate Voltage Drain Current (IDSS) 10mA Operating Temperature Range -65 - 150°C Power Dissipation (PD) 300mW Related Documents:- BFW11 JFET Datasheet
