P55NF06 power MOSFETs have been developed using STMicroelectronics’ unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the devices suitable for use as primary switch in advanced high-efficiency isolated DCDC converters for telecom and computer applications, and applications with low gate charge driving requirements. Features:- • 100% avalanche tested • Application oriented characterization • Switching application Detailed Specifications:- Number of Channels 1 Channel Transistor Polarity N-Channel Drain-Source Breakdown Voltage (Vds) 60V Continuous Drain Current (Id) 50A Drain-Source Resistance (Rds On) 0.018Ohms Gate-Source Voltage (Vgs) 20V Gate Charge (Qg) 60 nC Operating Temperature Range -55 - 175°C Power Dissipation (Pd) 110W Related Documents:- P55NF06 MOSFET Datasheet
