The STGF19NC60KD IGBT devices are very fast IGBTs developed using advanced PowerMESH™ technology. This process guarantees an excellent trade-off between switching performance and low on-state behavior. Features:- • Low on voltage drop (VCE(sat)) • Low CRES / CIES ratio (no cross-conduction susceptibility) • Short-circuit withstand time 10 μs • IGBT co-packaged with ultra fast freewheeling diode Applications :- • High frequency inverters • Motor drives Specification:- Symbol Parameter Values Units VCES Collector-to-Emitter Voltage 600 V IC @ TC = 25°C Continuous Collector Current TC = 25 °C 16 A IC @ TC = 100°C Continuous Collector Current TC = 100 °C 10 ICP Pulsed Collector Current 75 VGE Gate-to-Emitter Voltage ± 20 V PTOT Total dissipation at TC = 25 °C 32 W TJ Operating Junction -55 to 150 °C Tstg Storage Temperature Range Related Document:- STGF19NC60KD IGBT Data Sheet
