The G15N60 is a fast IGBT in NPT-technology. The G15N60 IS 75% lower Eoff compared to previous generation combined with low conduction losses. The G15N60 has VCE of 600V, IC of 15A, VEC(sat) of 2.3V, and Tj of 150 degree. It is d esigned for : 1.Motor controls 2. Inverter. Features:- • Short circuit withstand time – 10 µs • NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability • Qualified according to JEDEC1 for target applications • Pb-free lead plating; RoHS compliant Specification:- Symbol Description Ratings Units VCE Collector-emitter voltage 600 V IC DC collector curren 15 A Tj Operating junction 150 °C Ts Soldering temperature 260 °C Tstg Storage temperature -55 °C Ptot Power dissipation 139 W tsc Short circuit withstand time 10 µs VG E Gate-emitter voltage ±20 V Related Document:- G15N60 IGBT Data Sheet
