CT60AM-18F IGBT - 900V 60A High Voltage Current IGBT

The CT60AM-18F is an Insulated Gate Bipolar Transistor which is a simple drive and has VCES of 900V,  IC of 60A and Integrated fast-recovery diode. The CT60AM-18F has a low VCE Saturation Voltage and small tail loss. Applications:- • Microwave oven • Electromagnetic cooking devices • Rice-cookers • Voltage-resonant inverter circuit electric appliances Specifications:- Symbol Parameter Ratings Units VCES Collector-Emitter Voltage 900 V VGES Gate-Emitter Voltage ±25 V VGEM Peak Gate-Emitter Voltage ±30 V IC Collector Current 60 A ICM Collector Current (Pulse) 120 A IE Emitter Current 40 A PC Maximum Power Dissipation 180 W Tj Junction Temperature –40 ~ 150 °C Tstg Storage Temperature –40 ~ 150 °C Related Document:- CT60AM-18F IGBT Data Sheet