The IRG4BC30UD is an Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode. Its is d esigned to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBTs. It is o ptimized for specific application conditions. The g eneration 4 IGBTs offers the highest efficiencies available. The HEXFRED diodes optimized for performance with IGBTs and the minimized recovery characteristics require less/no snubbing. Features:- • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200kHz in resonant mode • Generation 4 IGBT design provides tighter para- meter distribution and higher efficiency than Generation 3 • IGBT co-packaged with HEXFREDTM ultrafast, ultra- soft-recovery anti-parallel diodes for use in bridge configurations • Industry standard TO-220AB package Specification:- Symbol Parameter Values Units VCES Collector-to-Emitter Voltage 600 V IC @ TC = 25°C Continuous Collector Current 13 A IC @ TC = 100°C Continuous Collector Current 6.5 ICM Pulsed Collector Current 52 ILM Clamped Inductive Load Current 52 IF @ TC = 100°C Diode Continuous Forward Current 7 IFM Diode Maximum Forward Current 52 VGE Gate-to-Emitter Voltage ± 20 V PD @ TC = 25°C Maximum Power Dissipation 60 W PD @ TC = 100°C 24 TJ Operating Junction and -55 to 150 °C Tstg Storage Temperature Range Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) Mounting Torque, 6-32 or M3 Screw. 10 lbf•in (1.1 N•m) Related Document:- IRG4BC30UD IGBT Data Sheet
