The HGTG11N120CND is a Non-Punch Through (NPT) IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT used is the development type TA49291. The Diode used is the development type TA49189. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. Features:- • 43A, 1200V, TC = 25oC • 1200V Switching SOA Capability • Typical Fall Time 340ns at TJ = 150oC • Short Circuit Rating • Low Conduction Loss Specification:- Symbol Parameter Ratings Units BVCES Collector to Emitter Voltage 1200 V IC25 Collector Current Continuous A At TC = 25°C 43 IC110 At TC = 100°C 22 ICM Collector Current Pulsed 80 A VGES Gate to Emitter Voltage Continuous ±20 V VGEM Gate to Emitter Voltage Pulsed ±30 V SSOA Switching Safe Operating Area at TJ = 150°C 55A at 1200V PD Power Dissipation Total at TC = 25°C 298 W Power Dissipation  TC > 25°C 2.38 W/°C TJ,Tstg Operating and Storage Junction Temperature Range -55 to 150 °C TL Maximum Lead Temperature for Soldering 260 °C tsc Short Circuit Withstand Time at VGE = 15V 8 µs tsc Short Circuit Withstand Time at VGE = 12V 15 µs Related Document :- HGTG11N120CND IGBT Data Sheet
