The G160N60 of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses. The UFD series is designed for applications such as motor control and general inverters where high speed switching is a required feature. Applications:- • AC & DC motor controls • General purpose inverters • Robotics, servo controls • Power supplies. Features:- • High speed switching • Low saturation voltage : VCE(sat) = 2.1 V @ IC = 80A • High input impedance • CO-PAK, IGBT with FRD: trr = 75nS (typ.) Specification:- Symbol Parameter Ratings Units VCES Collector-emitter voltage 600 V VGES DC collector curren ±20 V IC Collector Current @ TC = 25°C 160 A Collector Current @ TC = 100°C 80 ICM Pulsed Collector Current 300 A IF Diode Continuous Forward Current @ TC =100°C 25 A IFM Diode Maximum Forward Current 280 A PD Maximum Power Dissipation @ TC = 25°C 250 W Maximum Power Dissipation @ TC = 100°C 100 TJ Operating Junction Temperature -55 to 150 °C Tstg Storage Temperature Range -55 to 150 °C TL Maximum Lead Temp. for Soldering Purposes 300 °C Related Document:- G160N60 IGBT Data Sheet
