The G60N100B2TD is a  1000V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation. This device offers the optimum performance for hard switching application such as UPS, welder applications. Applications :- • UPS, Welder Features:- • High Speed Switching • Low Saturation Voltage: VCE(sat) = 2.5 V @ IC = 60 A • High Input Impedance • Built-in Fast Recovery Diode Specification:- Symbol Parameter Ratings Units VCES Collector-emitter voltage 1000 V VGES DC collector curren ±25 V IC Collector Current @ TC = 25°C 60 A Collector Current @ TC = 100°C 42 ICM Pulsed Collector Current 200 A IF Diode Continuous Forward Current @ TC =100°C 15 A PD Maximum Power Dissipation @ TC = 25°C 180 W Maximum Power Dissipation @ TC = 100°C 72 TJ Operating Junction Temperature -55 to 150 °C Tstg Storage Temperature Range -55 to 150 °C TL Maximum Lead Temp. for Soldering Purposes 300 °C Related Document :- G60N100BNTD IGBT Data Sheet
